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IXYS SEMICONDUCTOR IXFN200N10P Datasheet & Stock
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
Fast intrinsic rectifier
Rugged polysilicon gate cell structure
Encapsulating epoxy meets UL94V-0, flammability classification
Rugged polysilicon gate cell structure
Easy to mount
High power density
Space savings
Applications
Power Management,
Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
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View IXFN200N10P Datasheet [pdf] |
| Source | Part No | Stock | Inv Date | Qty/Price USD | Buy/RFQ | ||
|---|---|---|---|---|---|---|---|
| Newark | IXFN200N10P | 1 | 04-19-2024 | Unit price: $29.24 | Authorized Distributors |
Specifications for IXYS SEMICONDUCTOR IXFN200N10P
Frequently Asked Questions
Where can I buy IXYS SEMICONDUCTOR IXFN200N10P?
You can click on the BUY or RFQ button to purchase IXFN200N10P from an authorized IXYS SEMICONDUCTOR distributor.
How do I troubleshoot issues or seek technical support for part IXFN200N10P?
You can download the IXFN200N10P datasheet or Visit the IXYS SEMICONDUCTOR website for support.
Who is the manufacturer of IXFN200N10P?
IXYS SEMICONDUCTOR
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