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Honeywell SEP8706001 Infrared Emitting Diode
The Honeywell SEP8706 is an aluminum gallium arsenide infrared emitting diode designed for applications requiring efficient and reliable infrared emission. Encapsulated in a side-emitting, smoke gray plastic package, the SEP8706 provides a 50-degree nominal beam angle and an 880nm wavelength. Its key advantage lies in its higher output power compared to gallium arsenide devices when operating at similar drive currents. The device is mechanically and spectrally matched to Honeywell's SDP8406 phototransistor, SDP8106 photodarlington, and SDP8000/8600 series Schmitt triggers, making it suitable for use in infrared communication, remote control, and proximity sensing systems. It exhibits 70% greater power intensity than gallium arsenide devices at the same forward current.
Honeywell SEP8706001 Infrared Emitting Diode Specifications:
- Beam Angle: 50 degrees (nominal)
- Wavelength: 880 nm
- Package Type: Side-emitting, smoke gray plastic
- Continuous Forward Current: 50 mA
- Power Dissipation: 100 mW
- Operating Temperature Range: -40¡C to 85¡C
- Storage Temperature Range: -40¡C to 85¡C
- Soldering Temperature: 240¡C (5 sec)
- Forward Voltage: Typically 1.5 V (at 20 mA)
- Spectral Bandwidth: Approximately 760-880-960 nm
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Frequently Asked Questions
Where can I buy Honeywell SEP8706001?
You can click on the BUY or RFQ button to purchase SEP8706001 from an authorized Honeywell distributor.
How do I troubleshoot issues or seek technical support for part SEP8706001?
You can download the SEP8706001 datasheet or visit the Honeywell website for support.
Who is the manufacturer of SEP8706001?
Honeywell