The BFR193F is a low noise silicon bipolar RF transistor optimized for high-gain amplifiers handling frequencies up to 2 GHz. It features low noise figure, high linear broadband amplification capability, and is RoHS compliant. Designed for applications requiring minimal distortion, it operates at a collector-emitter voltage of 12V and can dissipate up to 580mW. Its robust construction ensures reliable performance in radio frequency and broadband communication systems, making it suitable for high-frequency, low-noise amplification tasks with excellent stability and efficiency.
Galvanic isolation in certain applications, RF bandwidth up to 2 GHz
Package Type TSFP3, compact SMD package suitable for high-frequency modules
Buy the Buy Infineon BFR193F Part Number BFR193FH6327XTSA1 Online
Order the Infineon BFR193F transistor online today to enhance your RF amplifier designs. This low noise silicon bipolar transistor offers excellent high-frequency performance up to 2 GHz, with a low noise figure of 1 dB at 900 MHz. Its robust construction supports a collector-emitter voltage of 12V and dissipates 580mW. Ideal for low distortion broadband applications, it features RoHS compliance and a compact TSFP3 package, ensuring reliable, efficient, and high-quality RF amplification for communication devices and equipment.
Get Infineon BFR193F today—built for low noise RF amplification in high-frequency broadband systems with high stability and long-lasting durability.
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