The IAUS260N10S5N019T is a high-performance N-channel Power MOSFET designed for automotive and industrial applications. It features a continuous drain current of 260 A, low Rds(on) of 1.6-2.6 mΩ, and a drain-source breakdown voltage of 100 V. With robust design, enhanced electrical testing, and extended qualification beyond AEC-Q101 standards, this MOSFET offers excellent efficiency and thermal performance. Suitable for high-current switching, motor drives, and power management systems, it operates within a temperature range of -55°C to 175°C, ensuring durability in harsh environments.
INFINEON IAUS260N10S5N019TATMA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 100 V
Continuous drain current: 260 A
Rds(on): 1.6 to 2.6 mΩ
Gate-source voltage: ±20 V
Power dissipation: 300 W at 25°C
Operating temperature range: -55°C to 175°C
Avalanche energy: 400 mJ (single pulse)
Thermal resistance junction to case: 3 to 9 K/W
Gate threshold voltage: 2.2 to 3.8 V
Device package: PG-HDSOP-16-2
Qualification: Extended beyond AEC-Q101
Climatic category: IEC 55/175/56
Max. peak reflow temperature: 260°C
Buy the Cinfineon IAUS260N10S5N019T – Reliable Power MOSFET for Industrial Applications
Secure your high-current power management needs with the Cinfineon IAUS260N10S5N019T. This premium N-channel MOSFET offers 260A continuous drain current, low Rds(on), and excellent thermal performance, making it perfect for automotive, industrial, and power switching applications. With extended qualification beyond AEC-Q101, it ensures high durability and reliability in harsh environments. Its rugged design and wide operating temperature range from -55°C to 175°C provide the confidence needed for demanding power systems. Purchase online today to ensure top-tier performance and durability for your electronic projects.
Buy Cinfineon IAUS260N10S5N019T now and experience unmatched reliability and performance in high-current industrial and automotive power systems.
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