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INFINEON IMW65R107M1HXKSA1 Silicon Carbide MOSFET

The 650 V CoolSiC™ MOSFET is built on advanced silicon carbide technology with over 20 years of development by Infineon. Designed for high efficiency and reliability, it features optimized switching behavior, a robust fast body diode with low Qr, and superior gate oxide reliability suitable for high-temperature, demanding applications. Its compact PG-TO 247-3 package supports high system power density, making it ideal for SMPS, UPS, solar inverters, EV charging, and energy storage systems. Fully qualified per JEDEC standards ensures dependable industrial performance.

Authorized Distributors
Source:Newark
Part No:IMW65R107M1HXKSA1
Stock:203
Inv Date:05-29-2026
Price: Unit price: $7.7
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Source:DigiKey
Part No:IMW65R107M1HXKSA1
Stock:286
Inv Date:05-29-2026
Price: Unit price: $8.29
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Part No:IMW65R107M1HXKSA1
Stock:342
Inv Date:05-30-2026
Price: Unit price: $7.1
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Part No:IMW65R107M1HXKSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $2.94
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INFINEON IMW65R107M1HXKSA1 Silicon Carbide MOSFET Specifications:

  • Voltage Rating: 650 V
  • Continuous drain current: 3 A
  • Pulsed drain current: 48 A
  • Avalanche energy, single pulse: 76 mJ
  • Avalanche energy, repetitive: 0.38 mJ
  • Gate threshold voltage: 3.5 V to 5.7 V
  • On-state resistance: 0.139 Ω at 18 V gate drive
  • Gate resistance: 12.0 Ω
  • Maximum junction temperature: 150°C
  • Thermal resistance, junction-case: 1.6 °C/W
  • Thermal resistance, junction-ambient: 62 °C/W
  • Power dissipation: 75 W
  • Storage temperature: -55°C to 150°C
  • Vds breakdown voltage: 650 V
  • Gate-source leakage current: less than 100 nA at 20 V
  • Package: PG-TO 247-3
  • Switching times, typical: 9.2 ns turn-on, 126 ns turn-off
  • Reverse recovery charge: 76 nc
  • Diode forward voltage: 4.0 V at 8.9 A

Buy the Buy Infineon Silicon Carbide MOSFET Part Number IMW65R107M1H Online

Purchase the Infineon 650 V CoolSiC MOSFET Part Number IMW65R107M1H online today for high-efficiency power switching solutions. This solid silicon carbide device delivers superior reliability, optimized switching performance, and robust thermal management. Its compact PG-TO 247-3 package simplifies integration into industrial power supplies, solar inverters, electric vehicle chargers, and energy storage systems. Built over 20 years of SiC development, it meets JEDEC qualification standards, ensuring dependable operation in demanding environments. Secure your stock now and upgrade your power conversion designs for better efficiency and system robustness.

Order your Infineon SeriesIMW65R107M1H 650V CoolSiC MOSFET today and enhance your system efficiency with reliable silicon carbide technology.

Frequently Asked Questions

Where can I buy INFINEON IMW65R107M1HXKSA1?

You can click on the BUY or RFQ button to purchase IMW65R107M1HXKSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IMW65R107M1HXKSA1?

You can download the IMW65R107M1HXKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMW65R107M1HXKSA1?

INFINEON

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