The IPB407N30N is an Infineon OptiMOS™ Power-Transistor rated at 300 V with a low on-resistance of 40.7 mΩ and a maximum drain current of 44 A. Designed for efficient power management, it features fast diode recovery, high operating temperature up to 175°C, and ruggedness for hard switching applications. Its compact TO-263-3 package makes it suitable for high-performance power supply circuits, motor drives, and inverter systems, offering excellent thermal performance and reliable operation in demanding electronic applications.
INFINEON IPB407N30NATMA1 Power Transistor Specifications:
Voltage Rating: 300 V
Continuous Drain Current: 44 A
Pulsed Drain Current: 176 A
On-Resistance Rds(on): 40.7 mΩ
Maximum Operating Temperature: 175°C
Gate Threshold Voltage: 2 V to 4 V
Gate-Source Voltage: ±20 V
Avalanche Energy: 240 mJ
Thermal Resistance, junction - case: 0.3 to 0.5 K/W
Package: PG-TO 263-3
Diode Forward Voltage: 0.9 to 1.2 V at 44 A
Reverse Recovery Time: up to 304 ns
Gate Charge: 24 to 87 nC
Maximum Storage Temperature: -55°C to 175°C
Buy the Buy Infineon OptiMOS Power Transistor Part Number IPB407N30N Online
Get your Infineon OptiMOS Power Transistor IPB407N30N online today. This 300 V N-channel MOSFET offers low Rds(on), high current capacity, and fast switching for superior performance. Ideal for power supplies, motor drives, and inverter systems, it ensures dependable operation in demanding environments. With robust thermal characteristics and a compact package, it delivers efficient power management. Purchase now to benefit from quick delivery, competitive prices, and trusted quality for your industrial or automotive applications.
Order your Infineon OptiMOS Power Transistor IPB407N30N today and enhance your power management projects with reliable, high-efficiency electronics components.
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