INFINEON IRFH8318TRPBF High-Frequency Power MOSFET
The IRFH8318PbF is a HEXFET® Power MOSFET designed for high-frequency buck converters, offering low thermal resistance (< 1.7°C/W), low profile (<1.2mm), and industry-standard pinout for easy integration. It features a drain-to-source voltage of 30V, low gate-to-source voltage of +20V, and can handle continuous drain currents up to 21A at 70°C. The device supports pulsed drain currents up to 400A, power dissipation of 3.6W, and operates within a junction temperature range of -55°C to +150°C. Its RoHS compliance makes it environmentally friendly, suitable for high efficiency power switching applications.
INFINEON IRFH8318TRPBF High-Frequency Power MOSFET Specifications:
Drain-to-Source Voltage: 30 V
Gate-to-Source Voltage: +20 V
Continuous Drain Current @ 25°C: 27 A
Continuous Drain Current @ 70°C: 21 A
Pulsed Drain Current: 400 A
Power Dissipation: 3.6 W
Thermal Resistance Junction-to-Ambient: 35°C/W
Operates over junction temperature range: -55°C to +150°C
RoHS compliant, Pb-free, halogen-free
Low thermal resistance to PCB (<1.7°C/W)
Low profile package: PQFN 5x6 mm
Industry-standard pinout for easy surface-mount assembly
Buy the International IRFH8318PbF – Reliable HEXFET® Power MOSFET for Industrial Applications
Order the International IRFH8318PbF online today and enhance your high-frequency power switching designs with this reliable, low-profile HEXFET® MOSFET. Its excellent thermal management, high current capabilities, and industry-standard package ensure optimal performance and easier manufacturing. Perfect for synchronous buck converters, its RoHS compliance supports environmentally friendly solutions. Secure your supply of this high-performance device through our easy online ordering system and power your projects with confidence and efficiency.
Buy International IRFH8318PbF now and experience unmatched reliability and performance in high-frequency power switching.
Frequently Asked Questions
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