The IRFP260NPBF is a 200V single N-channel HEXFET power MOSFET housed in a TO-247AC package. It features very low on-resistance, high dv/dt rating, ease of paralleling, rugged construction, fast switching capabilities, simple drive requirements, and is fully avalanche rated. These characteristics make it highly efficient and reliable for a wide range of applications. The device has a drain-to-source voltage of 200V, gate-to-source voltage of ±20V, an on-resistance of 40 milliohms at Vgs 10V, power dissipation of 300W at 25°C, and a continuous drain current of 50A at Vgs 10V and 25°C. Its operating junction temperature range is from -55°C to 175°C.
Continuous Drain Current: 50 A at Vgs 10V and 25°C
Operating Junction Temperature Range: -55°C to 175°C
Package Type: TO-247AC
Thermal Resistance (Junction-to-Case): 0.50°C/W
Thermal Resistance (Case-to-Sink): 0.24°C/W
Body Diode Forward Voltage: 1.3 V at 28A
Repetitive Avalanche Energy: 30 mJ
Buy the Buy International HEXFET Power MOSFET Part Number IRFP260NPBF Online
Get the International IRFP260NPBF power MOSFET today and improve your electronics with its low on-resistance, high dv/dt rating, reliable avalanche capability, and efficient thermal management. Designed for industrial applications, this 200V N-channel device features fast switching, ease of paralleling, and a durable TO-247AC package. Its high power dissipation of 300W at 25°C and a continuous drain current of 50A make it perfect for demanding power supplies and switching circuits. Buy online now for quick delivery and superior performance.
Order your International IRFP260NPBF high-performance HEXFET power MOSFET today and ensure your industrial projects benefit from its fast switching and low Rds(on).
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