MAXIM INTEGRATED / ANALOG DEVICES DS1245Y70IND Non-volatile SRAM
The DS1245Y-70IND+ is a 1 Megabit (1024K) non-volatile SRAM encapsulated in a 32-pin EDIP package, organized as 131,072 words by 8 bits. It features integrated lithium backup battery and circuitry that monitors VCC to automatically activate backup power during voltage drops, ensuring data retention for up to 10 years without external power. This fully static memory device supports unlimited write cycles, low power CMOS technology, and a 70ns access time. Operating from 4.5V to 5.5V across -40°C to 85°C, it offers robust data protection, making it ideal for embedded applications requiring reliable non-volatile memory.
Data Retention: Minimum 10 years without external power
Access Time: 70 ns for read/write
Backup Power: Lithium cell remains disconnected until first power-up
Protection: Automatic data protection during power failure with write protection enable
Package: 32-pin EDIP
Supports unlimited write cycles
Low power CMOS technology
Write protection voltage: 4.37V
Voltage monitoring circuitry
Compatible with standard DIP 32-pin footprint
Buy the Buy Maximize Memory DS1245Y Part Number DS1245Y70IND Online
Secure your data with the DS1245Y70IND+ non-volatile SRAM, offering fast 70ns access, up to 10 years data retention, and seamless integration into embedded designs. Its lithium backup battery ensures data safety during power outages, making it perfect for critical applications. This fully static memory supports unlimited write cycles, operates reliably over -40°C to 85°C, and is supplied in a standard 32-pin EDIP package. Easily replaceable and compatible with existing DIP modules, it provides a robust solution for continuous data integrity and system reliability.
Buy Maximize Memory DS1245Y70IND now and enjoy reliable data retention with automatic backup protection and fast 70ns access time for your embedded systems.
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