Microchip Technology TN0110N3G N-Channel Enhancement-Mode FET
The low threshold enhancement-mode N-Channel Vertical DMOS FET provides high-speed switching, low on-resistance, high breakdown voltage, and is ideal for telecom, solid-state relays, and battery systems. Manufactured with a silicon-gate process, it features a maximum drain-to-source voltage of 100V, low input capacitance of 50pF, and an operating temperature range from -55°C to +150°C. Its compact TO-92 package ensures reliable performance in various electronic applications requiring fast response and high power handling.
Microchip Technology TN0110N3G N-Channel Enhancement-Mode FET Specifications:
Drain-to-source voltage BV ouss: 100V
Gate-to-source voltage: +20V
Maximum operating temperature: -55°C to +150°C
Power Dissipation: 1.0W at 25°C
Thermal Resistance: 132°C/W
Input Capacitance: 50pF
Output Capacitance: 25-35pF
Reverse Transfer Capacitance: 40-80pF
Drain current: 2.0A
On-resistance: 1.6-3.0Ω at 10V gate
Transconductance: 225-400 mmho
Package type: TO-92
Lead-free / RoHS compliant package
Operating temperature range: -55°C to +150°C
Buy the Supertex Series TNO0110 N-Channel Enhancement-Mode: TN0110N3G
Purchase the Supertex TN0110N3G N-Channel Enhancement-Mode FET online today and benefit from its high-speed switching capabilities, low on-resistance, and exceptional power handling. This silicon-gate device offers a maximum drain-to-source voltage of 100V, operates within a temperature range of -55°C to +150°C, and features a compact TO-92 package ideal for telecom, solid-state relays, and battery-operated systems. Ensure reliable, efficient performance in your electronic projects with this RoHS-compliant, high-performance MOSFET.
Get Supertex TN0110N3G today—built for high-speed switching, low on-resistance, and reliable operation in demanding electronic applications.
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You can download the TN0110N3G datasheet or visit the Microchip Technology website for support.
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Microchip Technology
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