The Central Semiconductor 2N6725 is a silicon NPN Darlington power transistor designed for amplifier applications. It features a collector-emitter voltage of up to 50 V, collector-base voltage of 60 V, emitter-base voltage of 12 V, and can handle a maximum DC collector current of 2 A. The device offers a power dissipation of 2 W and is housed in a TO-237 (SMD/SMT) package, suitable for surface mounting. It operates within a temperature range of -65°C to 150°C and has a DC gain (hFE) minimum of 25,000. The transistor is supplied in bulk packaging.
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You can download the 2N6725 datasheet or visit the NTE ELECTRONICS website for support.
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