The RF power field effect transistor MRFE6S9045NR1 is a high-performance N-channel enhancement-mode lateral MOSFET designed for broadband industrial and commercial applications up to 1000 MHz. It offers high gain, excellent efficiency, and ruggedness for large-signal amplifier use in base station equipment operating at 28V. Features include integrated ESD protection, RoHS compliance, and a plastic package capable of 225°C. Ideal for GSM, EDGE, and N-CDMA systems, it provides reliable operation with impressive parameters like Pout up to 45W, drain efficiency of 68%, and a cascode design for ruggedness.
Frequency Range: 920-960 MHz and broadband applications up to 1000 MHz
RoHS and Halogen-Free Plastic Package with stainless steel case
Integrated ESD protection, Tape and Reel packaging
Maximum ratings include drain-source voltage of 66 V, gate-source voltage of 12 V, and storage temp from -65°C to +150°C.
Buy the Freescale MRFE6S9045NR1 – Reliable RF Power MOSFET for Industrial Applications
Order the Freescale MRFE6S9045NR1 RF power transistor online today to benefit from its high output power, excellent efficiency, and robust construction. Perfect for GSM, EDGE, and broadband industrial applications, this device offers high gain, low intermodulation distortion, and reliable performance at 28V. Its RoHS compliant plastic package features integrated ESD protection, making it suitable for demanding environments. Take advantage of our fast delivery and comprehensive support to enhance your RF system designs with this dependable component.
Buy Freescale MRFE6S9045NR1 now and experience unmatched reliability and high efficiency in your broadband RF amplification projects.
Frequently Asked Questions
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