The 2N6387 and 2N6388 are plastic medium-power silicon transistors suitable for general-purpose amplifier and low-speed switching applications. Featuring high DC current gain, collector—emitter sustaining voltage of 60 Vde for 2N6387 and 80 Vde for 2N6388, and low collector—emitter saturation voltage, these devices are designed with monolithic construction and built-in base—emitter shunt resistors. Packaged in a TO-220AB case, they are Pb-free and RoHS compliant, capable of handling up to 10 A continuous collector current, with maximum power dissipation of 65 W, ideal for reliable industrial applications.
Maximum collector-emitter saturation voltage: 3.0 V
DC current gain: 1000 to 20,000
Transition frequency (fT): 1.0 MHz
Capacitance (Cob): 200 pF
Maximum storage temperature: +150°C
Buy the ON Semiconductor 2N6387 – Reliable Silicon Transistor for Industrial Applications
Purchase the ON Semiconductor 2N6387G silicon transistor online today and equip your industrial systems with high-performance switching and amplification. With a collector—emitter voltage of 60 volts, continuous collector current of 10 amperes, and a power dissipation of 65 watts, this device guarantees reliability and efficiency in low-speed switching and general-purpose amplifier roles. Its TO-220AB package and RoHS compliance make it ideal for a variety of industrial applications, providing durability, high current gain, and stable thermal characteristics for seamless integration into your designs.
Order your ON Semiconductor 2N6387G silicon power transistor today and give your industrial projects the dependable switching and amplification performance they deserve.
Frequently Asked Questions
Where can I buy ONSEMI 2N6387G?
You can click on the BUY or RFQ button to purchase 2N6387G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part 2N6387G?
You can download the 2N6387G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of 2N6387G?
ONSEMI
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