This N-Channel PowerTrench MOSFET features an advanced technology designed for extremely low on-state resistance and superior switching performance. It handles up to 100 V and 50 A, making it suitable for synchronous rectification in power supplies, motor drives, uninterruptible power supplies, and micro solar inverters. With a low gate charge of 16.2 nC and fast switching speed, it provides high efficiency and low power dissipation. RoHS compliant, it ensures environmental safety and reliability in high-power applications.
ONSEMI FDP150N10AF102 Power MOSFET Specifications:
Drain to Source Voltage: 100 V
Continuous Drain Current: 50 A at 25°C
Pulsed Drain Current: 200 A
Gate to Source Voltage: ±20 V
Gate Threshold Voltage: 2.0 V to 4.0 V
On-Resistance (Rds(on)): 12.5 mΩ (Typ.) at Vgs=10 V, Id=50 A
Gate Charge: 16.2 nC (Typ.) at Vgs=10 V
Thermal Resistance, Junction to Case: Max. 1.6 °C/W
Thermal Resistance, Junction to Ambient: Max. 62.5 °C/W
Operating Temperature Range: -55°C to +175°C
Maximum Lead Soldering Temperature: 300°C for 5 seconds
Package: TO-220
Buy the Buy ON Semiconductor FDP150N10A Part Number Online
Acquire the ON Semiconductor FDP150N10A Power MOSFET online for high-performance switching. With 100 V, 50 A capability, low gate charge, and fast switching, it offers excellent efficiency. Ideal for power supplies, motor drives, and uninterruptible power supplies, this device ensures reliable operation in demanding environments. Purchase now to benefit from RoHS compliance and superior thermal performance, enabling your projects to achieve high power handling with minimized energy loss and enhanced durability. Simplify your procurement process by ordering today for quick delivery and unmatched quality.
Order your ON Semiconductor FDP150N10A Power MOSFET today and ensure reliable high-current switching with low on-resistance for your power electronics.
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