The FQD2P40TM is a P-Channel enhancement mode power MOSFET designed for high-efficiency power switching applications. It features a drain-source voltage of -400 V and a continuous drain current of -1.56 A at 25°C, with a maximum gate charge of 10 nC. Built using proprietary planar stripe and DMOS technology, it offers excellent switching performance, low on-resistance, and high avalanche energy. Suitable for switched mode power supplies, motor control, and audio amplifiers, it is RoHS compliant, providing reliable and energy-efficient operation in various electronic systems.
Enhance your electronic systems with the FQD2P40TM P-Channel power MOSFET, rated for -400 V and -1.56 A. Engineered for high efficiency, low on-resistance, and superior switching capabilities, it is ideal for power supplies, motor control, and audio applications. Featuring a low gate charge of 10 nC and RoHS compliance, this device ensures reliable operation under demanding conditions. Easy to incorporate into your design with its compact D-PAK package, it provides excellent thermal performance and avalanche energy strength for durable, high-performance power management.
You can click on the BUY or RFQ button to purchase FQD2P40TM from an authorized ONSEMI distributor.
You can download the FQD2P40TM datasheet or visit the ONSEMI website for support.
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