The MJ11016G is a high-voltage NPN Darlington power transistor with a collector-emitter voltage of 120V, designed for high-current output in general-purpose amplifiers. It features monolithic construction with a built-in base-emitter shunt resistor, high DC current gain of at least 1000, and junction operation up to +200°C. It supports a collector current of 30A and total device dissipation of 200W, making it suitable for industrial power amplification, audio response, and switching applications. Its robust thermal characteristics ensure reliable operation under demanding conditions.
Buy the Buy Semiconductor High-Current Power Transistor Part Number MJ11016G Online
Purchase the MJ11016G high-current power transistor online for reliable power amplification in industrial and amplifier systems. With a collector-emitter voltage of 120V, collector current of 30A, and a total dissipation of 200W, it ensures robust performance. The monolithic construction and built-in base-emitter shunt resistor provide high DC current gain of at least 1000, operational up to +200°C. Ideal for demanding environments, this NPN transistor guarantees durability and efficiency for various power switching and amplifier applications.
Buy Semiconductor MJ11016G now and experience unmatched reliability and performance in power amplification and industrial switching applications.
Frequently Asked Questions
Where can I buy ONSEMI MJ11016G?
You can click on the BUY or RFQ button to purchase MJ11016G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part MJ11016G?
You can download the MJ11016G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of MJ11016G?
ONSEMI
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