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ONSEMI MJD3055T4G Power Transistor

The device is a power transistor suitable for general-purpose amplifier and low-speed switching applications, designed with surface-mount DPAK packaging for efficient installation. It features high current gain and bandwidth product, UL 94 V-0 epoxy, and compliance with RoHS standards, making it ideal for automotive and industrial use. The transistor can handle collector-emitter voltages up to 60 V, collector currents of 10 A, and power dissipation of 20 W at 25°C. Its thermal and electrical characteristics support reliable, high-performance switching and amplification tasks in various electronic circuits.

Authorized Distributors
Source:Newark
Part No:MJD3055T4G
Stock:10
Inv Date:06-10-2026
Price: Unit price: $1.3
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Part No:MJD3055T4G.
Stock:10000
Inv Date:06-10-2026
Price: Unit price: $0.396
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Source:DigiKey
Part No:MJD3055T4G
Stock:30624
Inv Date:06-10-2026
Price: Unit price: $1.27
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Part No:MJD3055T4G
Stock:7274
Inv Date:06-11-2026
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Part No:MJD3055T4G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.8
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Part No:MJD3055T4G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.5057
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Part No:MJD3055T4G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.5057
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Part No:MJD3055T4G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.28
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ONSEMI MJD3055T4G Power Transistor Specifications:

  • Collector-Emitter Voltage: 60 Vdc
  • Collector-Base Voltage: 70 Vdc
  • Emitter-Base Voltage: 5 Vdc
  • Collector Current: 10 Adc
  • Base Current: 6 Adc
  • Total Power Dissipation: 20 W at 25°C
  • Power Derating: 0.16 W/°C above 25°C
  • Operating Temperature Range: -85°C to +150°C
  • Thermal Resistance, Junction-to-Case: 6.25°C/W
  • Thermal Resistance, Junction-to-Ambient: 71.4°C/W
  • Storage Temperature Range: -85°C to +150°C
  • Electrostatic Discharge (ESD) Human Body Model: 3B V
  • Physical Package: DPAK, Case 369C
  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • UL 94 V-0 Flame Rating
  • RoHS Compliant and Pb-Free
  • Maximum Collector-Emitter Saturation Voltage: Vce(sat)
  • DC Current Gain Typical: Based on test conditions
  • Switching Characteristics: Turn-on and turn-off times tested at specified pulse widths

Buy the ON Semiconductor MJD2955 – Reliable Power Transistor for Industrial Applications

Elevate your electronic projects with the high-performance power transistor designed for industrial and automotive applications. Featuring a surface-mount DPAK package, this transistor ensures reliable switching and amplification with high current gain, UL 94 V-0 epoxy, and RoHS compliance. Capable of handling collector-emitter voltages up to 60 V and currents of 10 A, it delivers 20 W power dissipation at 25°C, ensuring durability and efficiency in demanding environments. Order online now for swift delivery and professional results.

Order your ON Semiconductor MJD3055T4G power transistor today and give your projects the dependable quality they deserve for efficient switching and amplification.

Frequently Asked Questions

Where can I buy ONSEMI MJD3055T4G?

You can click on the BUY or RFQ button to purchase MJD3055T4G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MJD3055T4G?

You can download the MJD3055T4G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MJD3055T4G?

ONSEMI

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