ONSEMI MMBT3416LT3G General Purpose NPN Transistor
The MMBT3416LT3G is a general-purpose NPN silicon transistor in a SOT-23 package, suitable for switching and amplification applications. It features a collector-emitter voltage of 40 V, collector-base voltage of 4.0 V, and a collector current of 100 mA. Its thermal characteristics include a maximum junction-to-ambient resistance of 556 °C/W and dissipation of 225 mW on FR-5 boards. This Pb-Free, RoHS compliant device provides high DC current gain and low saturation voltages, making it ideal for compact electronics and switching circuits.
ONSEMI MMBT3416LT3G General Purpose NPN Transistor Specifications:
Collector - Emitter Voltage Voce: 40 V
Collector - Base Voltage Veso: 4.0 V
Collector Current Ic: 100 mA
Total Device Dissipation on FR-5 Board, Pp: 225 mW
Total Device Dissipation on Alumina Substrate, Pp: 300 mW
Thermal Resistance, Junction-to-Ambient: 556 °C/W
Junction and Storage Temperature Range: -85°C to +150°C
Package: SOT-23
Dimensions: 1.0 x 0.75 x 0.062 inches
RoHS, Pb-Free, Halogen Free
Buy the ON Semiconductor Series General Purpose NPN Transistor: MMBT3416LT3G
Enhance your electronic projects with the reliable and compact General Purpose NPN Transistor. Available in a RoHS compliant SOT-23 package, this transistor offers 40 V collector-emitter voltage, 100 mA collector current, and excellent thermal stability. Ideal for switching, amplification, and small electronics, it ensures efficient performance in compact space. Purchase the ON Semiconductor MMBT3416LT3G online and enjoy fast delivery, quality assurance, and technical support for a seamless integration into your designs.
Order your ON Semiconductor Series General Purpose NPN Transistor MMBT3416LT3G today and give your electronics projects reliable switching and amplification performance.
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