The MUN5212 is a high-performance NPN transistors with monolithic bias resistor network designed to simplify circuit design, reduce board space, and lower component count. Featuring a collector-base voltage of 50V and a collector-emitter voltage of 50V, it offers a continuous collector current of 100mA, optimized for automotive and industrial applications. The device is AEC-Q101 qualified, Pb-Free, halogen-free, and RoHS compliant, making it suitable for various demanding environments, ensuring reliable operation, and reducing system cost with integrated bias networks for efficient electronic control and switching functions.
Total Device Dissipation (SC-59): 230 mW at 25°C, Derates 18 mW/°C
Total Device Dissipation (SOT-23): 246 mW at 25°C, Derates 20 mW/°C
Thermal Resistance Junction to Ambient (SC-59): 370 °C/W
Thermal Resistance Junction to Lead (SC-59): 264 °C/W
Ambient Temperature Range: -55°C to +150°C
Maximum Power Dissipation varies by package, e.g., 230 mW for SC-59, 246 mW for SOT-23
Electrical Characteristics (25°C): Collector-Base Breakdown Voltage 50 V, Collector-Emitter Breakdown Voltage 50 V
DC Current Gain (hFE): 60 to 100
Collector-Emitter Saturation Voltage: 0.25 V at 10 mA collector current
Buy the Buy ON Semiconductor MUN5212 Part Number MUN5212T1G Online
Purchase the ON Semiconductor MUN5212T1G NPN transistor online today and experience reliable high-voltage switching with integrated bias resistor network. Designed for automotive, industrial, and control applications, it offers a collector-base voltage of 50V, a continuous collector current of 100mA, and is RoHS compliant for eco-friendly design. Its compact size and integrated features help reduce system costs and circuit complexity. Order now and improve your electronic designs with this efficient, durable, and high-quality transistor, perfect for demanding environments and precision control.
Get ON Semiconductor MUN5212T1G today—built for precision and long-lasting durability in electronic switching and automotive control.
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