The RFP50N06 is a high-performance N-Channel Power MOSFET designed for switching applications such as regulators, converters, and motor drivers. Manufactured with the MegaFET process, it offers excellent Peak Current handling of 50A at a drain-source voltage of 60V, with low on-resistance of 0.022Ω. The device is capable of operating up to 175°C and features rapid switching times, high pulsed current capacity, and reliable thermal performance. Its compact TO-220AB package makes it suitable for efficient power management in industrial and electronic systems.
Gate to Source Leakage Current: ±100nA at Vgs = 20V
Maximum Storage and Operating Temperature: 175°C
Package: TO-220AB
Thermal Resistance Junction to Ambient: 62°C/W
Drain to Source Breakdown Voltage: 60V
Rise Time: 55ns
Fall Time: 13ns
Total Gate Charge: 125-150nC
Switching Delay Time: 95-280ns
Buy the Buy ON Semiconductor RFP50N06 Part Number RFP50N06 Online
Purchase the ON Semiconductor RFP50N06 Power MOSFET online today to enhance your power switching designs. This high-current N-channel transistor supports up to 60V and 50A, making it ideal for efficient switching regulators, converters, and motor control systems. Its low on-resistance ensures minimal power loss, while rapid switching times facilitate high-speed operation. The durable TO-220AB package and extended temperature range of -55°C to 175°C provide excellent thermal management and reliability. Optimize your electronic applications with this trusted power device available for quick and secure online purchase.
Get ON Semiconductor RFP50N06 today—built for high-current switching, fast response, and optimized thermal performance in power management applications.
Frequently Asked Questions
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You can download the RFP50N06 datasheet or visit the ONSEMI website for support.
Who is the manufacturer of RFP50N06?
ONSEMI
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