The HIP2211FRTZT7A is a high-performance half-bridge driver designed for NMOS FETs in up to 100V configurations. It features robust 3A source and 4A sink capabilities, fast propagation delays of 15ns, and matched timing for high-frequency switching applications. The device includes integrated UVLO protection, a wide supply voltage range of 6V to 18V, and configurable dead time via RDT for shoot-through prevention. Its pin-compatible design supports various packages, including 8 Ld SOIC and 10 Ld TDFN, making it suitable for motor control, power conversion, and telecom solutions.
Maximum VDD: 20V, Boot Voltage: 20V, HS Voltage: 120V
Output Current: 3A source, 4A sink
Propagation Delay: 15ns typical
Dead Time: Adjustable 15ns to 350ns via RDT resistor (10kΩ to 100kΩ)
UVLO Protection on VDD and Boot
Fast Switching with 15ns delay, delay matching 2ns
Package Options: 8 Ld SOIC, 8 Ld DEN, 10 Ld TDFN
Operating Temperature: -40°C to +125°C
Dissipation: 1.22W (SOIC), 3.12W (TDFN)
ESD Rating: 25 kV (Human Body Model)
Input Logic Compatibility: 3.3V CMOS, PWM input with mid-level control
Bootstrap diode integrated with low forward voltage (~0.85V)
Ground reference: VSS; Reference node: HS
Peak output voltages: VHO and VLO up to 120V
Buy the Buy Renesas HIP2211FRTZT7A Part Number Online
Purchase the Renesas HIP2211FRTZT7A now for reliable high-frequency NMOS FET driving. Designed for power conversion, motor control, and telecom systems, it offers fast switching, integrated UVLO protection, and customizable dead time to prevent shoot-through. Its compact 8 Ld SOIC or 10 Ld TDFN packages enhance PCB integration. Built with high-efficiency, RoHS compliance, and excellent thermal management, the HIP2211FRTZT7A is the ideal choice to ensure optimal performance and durability in demanding electronic applications.
Get Renesas HIP2211FRTZT7A today—engineered for high-frequency power switching, featuring robust current drive and adjustable dead time for optimal performance.
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