The 2SB1188T100Q is a PNP medium-power epitaxial planar silicon transistor designed for high-current applications up to 2A. It features a low collector-to-emitter saturation voltage of -0.5V, making it ideal for power management, industrial equipment, and switching circuits. With a collector-base voltage of 40V and collector-emitter voltage of 32V, this transistor provides reliable performance with a maximum junction temperature of 150°C. Its compact, epoxy resin package ensures durability and ease of mounting in various electronic systems, supporting efficient and stable operation.
Experience dependable power switching with the ROHM Series Power Transistor 2SB1188T100Q. Designed for high-current applications, it features a low saturation voltage of -0.5V, ensuring efficient energy use. Its robust epoxy package and high junction temperature tolerance make it ideal for industrial and power management circuits. Suitable for various electronic devices, this transistor provides consistent performance, easy integration, and durability. Purchase online now to upgrade your power systems with trusted ROHM quality and ensure seamless operation for demanding applications.
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You can download the 2SB1188T100Q datasheet or visit the ROHM website for support.
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