The 2S8D2114K is a high-current NPN silicon transistor epitaxial planar type designed for reliable high current gain and low saturation voltage in industrial electronics. It features a collector-emitter voltage of 20V, collector current of 0.5A, and transition frequency exceeding 350 MHz, making it suitable for high-speed switching applications. Its high DC current gain and emitter-base voltage allow for efficient performance in power amplification systems and control circuits, ensuring stability and durability under demanding operational conditions.
ROHM 2SD2114KT146V High-current Power Transistor Specifications:
Collector-base voltage Vcoo 25 V
Collector-emitter voltage Vceo 20 V
Emitter-base voltage Vebo 12 V
Collector current Ic 0.5 A (DC), 1 A (Pulse)
Collector power dissipation Pc 0.2 W
Transition frequency fr > 350 MHz
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
Collector cutoff current Icbo 0.5 µA
Emitter cutoff current Ieso 0.5 µA
Collector-emitter saturation voltage Vce(sat) 0.18 V (Typ.) at 500mA, 20mA
DC current transfer ratio hfe 820 to 2700 at Vce=3V, Ic=10mA
Output capacitance Cob 8.0 pF
Output On-resistance Ron 0.8 Ω
Buy the ROHM 2S8D2114K – Reliable NPN Power Transistor for Industrial Applications
Purchase the high-current power transistor from ROHM online today. Designed with high DC current gain and low saturation voltage, it ensures efficient performance in power amplification and switching applications. Ideal for industrial electronics, control systems, and high-speed switching circuits, it offers a transition frequency exceeding 350 MHz, collector-emitter voltage up to 20V, and collector current of 0.5A. Built for reliability and durability, this transistor guarantees optimal operation under demanding conditions, making it an excellent choice for engineers and technicians.
Get ROHM 2S8D2114K today—built for precision, high-current performance, and long-lasting durability in industrial electronics.
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