This high-performance SiC power module integrates SiC-DMOSFET and SiC-Schottky Barrier Diode technology, optimized for applications like photovoltaics, wind power, and induction heating. It features low surge, high-speed switching, and reduced temperature dependence, making it ideal for efficient power conversion. Designed with robust construction, it supports high voltages up to 1200V and currents up to 360A pulses. Its compact dimensions and reliable thermal management ensure excellent durability and performance in demanding industrial environments.
ROHM BSM180C12P2E202 Silicon Carbide Power Module Specifications:
Drain-Source Voltage: 1200 V
Repetitive Reverse Voltage: 1200 V
Gate-Source Voltage (+): 22 V
Gate-Source Voltage (—): -6 V
Maximum Drain Current (Pulse): 360 A
Maximum Drain Current (DC): 204 A
Total Power Dissipation: 1360 W
Maximum Junction Temperature: 175°C
Operating Junction Temperature Range: -40°C to 150°C
Isolation Voltage: 2500 Vrms
Thermal Resistance (Junction to Case): 0.11 K/W
Terminal to Heat Sink Clearance: 14.5 mm
Gate Charge: Typical 20 nC
Switching Times (t_on, t_off): 20-139 ns
Buy the ROHM Series BSM180C12P2E202 SiC Power Module: 1200V 360A
Purchase the ROHM Series BSM180C12P2E202 SiC Power Module online today for advanced power switching capabilities. Featuring 1200V blocking voltage, 360A pulse current, and optimized thermal design, this module is perfect for renewable energy and industrial applications. Its low switching loss, high-speed performance, and durable construction ensure reliable operation in demanding environments. Simplify your design process by ordering online now and elevate your power management with this high-efficiency, robust silicon carbide power module engineered for long-term industrial reliability.
Order your ROHM Series BSM180C12P2E202 SiC Power Module today and give your projects the dependable efficiency and high-voltage reliability they deserve.
Frequently Asked Questions
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