The R6009JNJ is a high-voltage N-channel power MOSFET designed for efficient switching applications in power management circuits. Featuring a drain-source voltage of 600V and a continuous drain current of 9A at 25°C, it offers low on-resistance and fast switching speeds, making it suitable for various industrial and consumer electronic devices. Its rugged avalanche capability and ROHS-compliant, Pb-free plating ensure reliable operation under demanding conditions. The device operates within a junction temperature range of -55°C to +150°C and has optimized thermal resistance for effective heat dissipation, supporting high efficiency in power conversion systems.
ROHM R6009JNJGTL High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 600V
Continuous Drain Current: 9A at 25°C
Pulsed Drain Current: 427A
Power Dissipation: 125W at 25°C
Avalanche Current: 1.8A
Avalanche Energy: 177mJ
Junction Temperature Range: -55°C to +150°C
Thermal Resistance, Junction-Case: 1.00°C/W
Thermal Resistance, Junction-Ambient: 80°C/W
Gate-Source Voltage: ±30V
Gate Threshold Voltage: 5.0V to 7.0V
Gate Resistance: 2.1Ω at 1MHz
Body Diode Electrical Characteristics: Source Current up to 9A, Reverse Recovery Time 65ns
Buy the ROHM Series R6009JNJ Power MOSFET: R6009JNJ
Purchase the ROHM R6009JNJ power MOSFET online today and enhance your electronic designs with a high-voltage, fast-switching, low on-resistance device. Perfect for power management, industrial systems, and consumer electronics, this MOSFET provides excellent thermal performance and durability, ensuring reliable operation even under challenging conditions. With straightforward mounting options and ROHS compliance, it’s the ideal choice for efficient, high-performance power circuits. Order now to benefit from fast shipping and expert support for your engineering needs.
Buy ROHM R6009JNJ now and experience unmatched reliability and high efficiency in power switching applications.
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