This power MOSFET features a drain-source voltage of 650V and a continuous drain current of 35A, designed for high-power switching applications. It boasts low on-resistance, fast switching capabilities, and a robust internal body diode for efficient operation. Its compact TO-247G package allows for easy mounting and cooling. Suitable for power supplies, motor drives, and high-voltage switching circuits, this transistor provides excellent thermal performance with a junction temperature range up to 150°C, making it ideal for demanding industrial and electronic systems.
ROHM R6535ENZ4C13 High Voltage Power MOSFET Specifications:
Drain-Source Voltage: 650V
Continuous Drain Current: 35A
Pulsed Drain Current: 105A
Power Dissipation: 379W
Junction Temperature Range: -55°C to +150°C
Thermal Resistance, Junction-Case: 0.33°C/W
Thermal Resistance, Junction-Air: 30°C/W
Gate-Source Voltage: ±30V
Gate Threshold Voltage: 2.0V to 4.0V
On-Resistance (Typical): 0.115Ω at 25°C
Breakdown Voltage: 650V
Reverse Recovery Time: 660ns
Avalanche Energy: 867mJ
Package: TO-247G
Soldering Temperature: 265°C for 10s
Buy the Buy ROHM R6535ENZ4 Power MOSFET Part Number R6535ENZ4C13 Online
Purchase the ROHM R6535ENZ4 Power MOSFET online today. Designed for high-voltage and high-current applications, it offers low Rds(on), fast switching capabilities, and excellent thermal performance. Its 650V drain-source voltage and 35A continuous drain current make it suitable for power supplies, motor drives, and industrial circuits. The TO-247G package ensures easy installation and heat dissipation. Stock is limited—order now to ensure your projects benefit from reliable, high-efficiency power switching with this durable and temperature-resistant device.
Get ROHM R6535ENZ4 today—built for high-voltage power switching with low Rds(on) and fast switching performance.
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