The RBQ30NS65A is a high-reliability, TO-263S package Schottky barrier diode designed for switching power supplies. It features a silicon epitaxial planar structure, a maximum repetitive peak reverse voltage of 65V, and an average forward rectified current of 30A. Its low forward voltage drop of approximately 0.64V at 15A ensures efficient power conversion, while its low reverse current of 25-120pA at 60V and 65V reverse voltage enhances performance in various applications. The diode is suitable for high-speed switching with thermal resistance of 2°C/W from junction to case, offering durable operation in demanding environments.
Purchase the ROHM RBQ30NS65A Schottky barrier diode online today and enjoy its high reliability, low forward voltage, and superior performance in power supply applications. Designed with a robust TO-263S package, this diode delivers efficient power conversion with a maximum repetitive peak reverse voltage of 65V and an average forward rectified current of 30A. Its low reverse current and thermal resistance ensure stable operation under high-temperature environments. Perfect for high-speed switching and demanding electronic circuits, buy now to enhance your device durability and performance.
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You can download the RBQ30NS65ATL datasheet or visit the ROHM website for support.
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