The RF501BGE2S is a high-speed recovery diode designed for efficient rectification in electronic circuits. Constructed with silicon epitaxial planar technology, it offers low switching loss and low forward voltage drops. Suitable for general rectification applications, this diode ensures reliable performance with a repetitive peak reverse voltage of 200V and a maximum forward surge current of 40A. Its compact design and robust construction make it ideal for use in power supplies, converters, and other electronic systems requiring fast recovery times and high efficiency.
ROHM RF501BGE2STL Fast Recovery Diode Specifications:
Repetitive peak reverse voltage: 200V
Reverse voltage: 200V
Average rectified forward current: 5A
Peak forward surge current: 40A
Junction temperature: -150°C to +150°C
Forward voltage: 0.92V at 5A
Reverse current: 1μA at VR=200V
Reverse recovery time: 15-25 ns
Thermal resistance junction to case: 6°C/W
Construction: Silicon epitaxial planar
Dimensions: Not specified, conforms to TO-252GE package
Application: General rectification with low switching loss
Buy the Buy ROHM RF501BGE2S Part Number RF501BGE2S Online
Purchase the ROHM RF501BGE2S diode online today for high-speed rectification and efficient power conversion. This diode features a 200V reverse voltage, 40A surge current capacity, and rapid recovery times of 15-25 ns. Its silicon epitaxial planar construction provides low forward voltage and minimal switching losses, ensuring optimal performance in power supplies, converters, and high-frequency applications. Convenient online ordering guarantees fast delivery, helping you quickly complete your electronics projects with confidence and reliability.
Order your ROHM RF501BGE2S diodes today and enhance your power circuitry with fast recovery, low losses, and reliable performance in electronic projects.
Frequently Asked Questions
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