The RFN10NS8DFH is a high-performance silicon epitaxial planar fast recovery diode, designed for general rectification applications. It features a cathode common dual type construction, low switching loss, and low forward voltage (Ve). Suitable for power switching, this diode has an 800 V reverse voltage, a 10 A average rectified current, and a fast recovery time of 20 to 40 ns. It is ideal for use in various power conversion and rectification circuits, ensuring efficient operation and reliability in demanding electronic systems.
ROHM RFN10NS8DFHTL Fast Recovery Diode Specifications:
Repetitive peak reverse voltage: 800 V
Reverse voltage: 800 V
Average rectified forward current: 10 A
Forward surge peak current: 60 A
Operating junction temperature: -55°C to +150°C
Forward voltage: 0.95V to 2.1V (at 5A)
Reverse current: 0.05 to 10 pA
Reverse recovery time: 20 to 40 ns
Junction to case thermal resistance: 3.0 °C/W
Construction: Silicon epitaxial planar type
Dimensions: TO263S (D2PAK)
Features include low switching loss and low Ve
AEC-Q101 qualified
Storage temperature: -55°C to +150°C
Buy the ROHM Series Standard Fast Recovery: RFN10NS8DFH
Buy the ROHM RFN10NS8DFH fast recovery diode online today for high efficiency in power rectification. Featuring 800 V reverse voltage, 10 A load current, and a quick recovery time of 20 to 40 ns, this diode is perfect for power supplies, converters, and other electronic applications requiring reliable high-speed switching. Its low forward voltage and robust construction ensure optimal performance and long-term durability in demanding environments. Purchase now and enhance your circuit's efficiency with trusted quality from ROHM.
Order your ROHM Series RFN10NS8DFH fast recovery diode today and ensure reliable, efficient rectification in your power circuits.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase RFN10NS8DFHTL from an authorized ROHM distributor.
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