The RFN1LAM7S is a silicon epitaxial planar recovery diode designed for general rectification applications. It features low forward voltage and switching loss, making it suitable for high-voltage rectification circuits. With a land size of 2.0 x 2.0 mm, it boasts a repetitive peak reverse voltage of 700 V and a maximum forward current of 0.8 A. Its construction ensures reliability, with a junction temperature up to -150°C and storage tolerance from -55°C to +150°C. Ideal for power supply and industrial rectification solutions.
Dimensions: 2.0 x 2.0 mm, land size 2.0 x 2.0 mm, package SOD-128
Construction: Silicon epitaxial planar type
Buy the ROHM RFN1LAM7S – Reliable Rectification Diode for Industrial Applications
Order the ROHM RFN1LAM7S recovery diode online today for superior high-voltage rectification. Its low forward voltage and switching loss enhance overall efficiency. Suitable for industrial power supplies and high-voltage circuits, this diode ensures dependable operation with a maximum repetitive peak reverse voltage of 700 V. Compact and robust, it features a silicon epitaxial planar construction, 2.0 x 2.0 mm land size, and a wide temperature range from -55°C to +150°C. Secure your supply chain and improve system performance by purchasing online now.
Buy ROHM RFN1LAM7S recovery diode now and enhance your power rectification circuits with low loss and high reliability in industrial environments.
Frequently Asked Questions
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