The RFU02VSM6S is a high-speed fast recovery diode designed for high frequency rectification applications. Featuring a silicon epitaxial planar structure, it offers small mold type dimensions and reliable switching performance. With a maximum repetitive peak reverse voltage of 600 V and forward voltage of approximately 1.5–2.2 V, it ensures efficient operation at high speeds with reverse recovery times ranging from 15 to 35 ns. Its robust junction temperature rating of -55°C to +150°C makes it suitable for demanding power electronics and high-frequency circuits, ensuring longevity and consistent performance.
ROHM RFU02VSM6STR Fast Recovery Diode Specifications:
Repetitive peak reverse voltage: 600 V
Direct voltage: 600 V
Maximum average current: 2 A
Non-repetitive surge current: 1 A
Junction temperature: -55°C to +150°C
Forward voltage: 1.5–2.2 V at 0.2 A
Reverse current: 0.01–10 pA at 600 V
Reverse recovery time: 15–35 ns
Capacitance: 5 pF
Construction: Silicon epitaxial planar
Land size: 0.17 mm + 0.10 mm
Package: Small mold type (TUMD2SM)
Features: High speed switching, small form factor
Buy the ROHM Series TUMD2SM Fast Recovery Diode: RFU02VSM6S
Purchase the ROHM RFU02VSM6S fast recovery diode online today. Designed for high-speed rectification with a reverse voltage of 600 V and low forward voltage, it offers efficient switching for power and RF circuits. Its silicon epitaxial planar structure ensures high reliability and longevity, making it ideal for demanding applications. Compact and lightweight, the diode provides quick recovery times from 15 to 35 nanoseconds, ensuring optimal performance in high-frequency environments. Reliable, durable, and easy to integrate into your power systems.
Get ROHM RFU02VSM6S today—built for high-speed switching and reliable rectification in power electronics and RF applications.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase RFU02VSM6STR from an authorized ROHM distributor.
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