The RGTH50TS65DGC13 is a 650V, 25A field stop trench IGBT designed for high-speed switching in power electronic applications such as PFC, UPS, and power conditioners. It features low collector-emitter saturation voltage of 1.6V at 25A, high pulsed current capability of 100A, and built-in fast recovery diode. Its construction ensures low switching losses, soft switching behavior, and RoHS compliance with lead-free plating, making it suitable for efficient, reliable power management in industrial and consumer equipment.
ROHM RGTH50TS65DGC13 Power Semiconductor Specifications:
Collector - Emitter Voltage: 650 V
Collector Current: 25 A at 100°C, 50A pulsed
Power Dissipation: 174 W at 25°C, 87 W at 100°C
Gate - Emitter Voltage: +30 V maximum
Collector - Emitter Saturation Voltage: 1.6 V at 25°C
Gate - Emitter Threshold Voltage: 4.5 V to 6.5 V
Operating Junction Temperature: -40°C to +175°C
Storage Temperature: -55°C to +175°C
Thermal Resistance (Junction-Case): 0.86°C/W
Diode Forward Voltage: 1.45 V at 20A, 1.25 V at 175°C
Diode Reverse Recovery Time: 58 ns
Switching Time: Turn-on delay 27 ns, fall time 50 ns at 25°C
Buy the Buy ROHM RGTHS50TS65DGC13 Part Number 650V 25A Trench IGBT Online
Enhance your power electronic systems with the ROHM RGTHS50TS65DGC13, a 650V, 25A trench IGBT with advanced fast recovery diode. Designed for high-speed switching, it offers low saturation voltage of 1.6V at 25A, ensuring efficient energy management. Its built-in diode features a reverse recovery time of 58 ns, minimizing switching losses. The device operates within a junction temperature range of -40°C to +175°C, with excellent thermal resistance for reliable long-term operation. Perfect for power supplies, UPS, and industrial electronics requiring robust performance and compliance with RoHS standards.
Get ROHM RGTHS50TS65DGC13 today—built for high-speed switching, low saturation voltage, and durable power performance in industrial applications.
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