The RHP020N06FRA is a silicon N-channel MOSFET designed for high-speed switching, low on-resistance, and wide safe operating area, suitable for various switching applications. With a drain-source voltage of 60V and continuous drain current of 42A, it features low gate-source leakage, rapid switching times, and robust power dissipation of 2W. Its structure includes an internal ESD protection diode and body diode, ensuring reliability in demanding electronic circuits. Typically mounted on a ceramic board, it complies with AEC-Q101 standards for automotive grade reliability.
Thermal Resistance (Channel to ambient) Rth(ch-a) 62.5°C/W when mounted on a ceramic board
Gate threshold voltage Vesim 1.0 - 25 V
Static drain-source on-state resistance Rds(on) 200-340 mo
Input Capacitance Cus 140 pF
Output Capacitance Cos 50 pF
Reverse transfer Capacitance Cas 40 pF
Forward Voltage Vfo 1.21V at 2A
Total gate charge Qg 7 nC
Buy the Buy ROHM RHP020N06FRA Part Number RHP020N06FRA Online
Purchase the ROHM RHP020N06FRA N-channel MOSFET online today and benefit from its high-speed switching capabilities, low on-resistance, and reliable performance. This automotive-grade semiconductor features a drain-source voltage of 60V, continuous drain current of 42A, and a power dissipation of 2W, making it ideal for demanding switching applications in industrial, automotive, and consumer electronics. Its robust internal protection and efficient thermal management ensure long-term durability and stability in various operating environments. Secure your supply of this high-quality device now for your latest electronic projects.
Order your ROHM Series RHP020N06FRA power MOSFET today and ensure high-speed switching with low on-resistance for reliable circuit performance.
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