The RJ1P12BBD power MOSFET is a high-performance, low on-resistance device suitable for switching applications in power supplies, motor drives, and motor control circuits. It features a maximum drain-source voltage of 100V, continuous drain current of 120A, pulsed drain current up to 240A, and power dissipation of 178W. Its compact TO-263AB package enables efficient heat dissipation, while its electrical characteristics include a gate threshold of 2.0 to 4.0V, and on-resistance ranging from 44 to 58 mΩ. Designed with ROHS compliance, it offers reliable performance with thermal resistance of 0.70°C/W junction-to-case, making it ideal for high-current switching operations.
Purchase the ROHM Power MOSFET RJ1P12BBDTLL online today to ensure your power circuits benefit from high current capacity, low on-resistance, and reliable thermal management. This device offers excellent switching performance for power supplies, motor control, and high-current switching applications. With ROHS compliance and a compact TO-263AB package, it is suitable for demanding electronic designs requiring efficiency, durability, and ease of mounting. Enjoy fast delivery and secure purchasing options, making it the perfect choice for professional engineers and electronic designers.
You can click on the BUY or RFQ button to purchase RJ1P12BBDTLL from an authorized ROHM distributor.
You can download the RJ1P12BBDTLL datasheet or visit the ROHM website for support.
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