The RQ5H020SP is a high-performance N-channel Power MOSFET optimized for high-speed switching applications. Featuring low on-resistance and built-in protection diodes, it ensures efficient power management with a maximum drain-source voltage of 45V and continuous drain current of 2.0A. Suitable for use in DC/DC converters and power supplies, it has a small surface-mount TSMT3 package, RoHS compliance, and robust thermal characteristics. Its electrical features include low gate charge, leakage currents, and reliable breakdown voltage, making it ideal for compact, high-efficiency electronics.
Purchase the ROHM RQ5H020SP Power MOSFET online to enhance your electronic projects with efficient high-speed switching performance. Featuring a compact TSMT3 package, low on-resistance, built-in protection diodes, and excellent thermal characteristics, this device supports reliable operation in power supplies and DC/DC converter applications. Its robust electrical specifications, including a maximum drain-source voltage of 45V and continuous drain current of 2.0A, ensure high efficiency and durability, making it an excellent choice for compact, high-performance electronic designs.
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You can download the RQ5H020SPTL datasheet or visit the ROHM website for support.
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