The RSF015N06 is a silicon N-channel MOSFET designed for switching applications. It features a built-in G-S protection diode, small surface mount package (TUMT3), and low voltage drive capability at 4V. With a drain-source voltage of 60V and continuous drain current of 41.5A, it offers reliable performance for power switching. The device provides low on-resistance, fast switching times, and is suitable for compact, high-efficiency electronic circuits requiring robust power handling and temperature stability up to 150°C.
Static drain-source on-resistance: 240-350 mΩ at Vgs=4.5V
Input capacitance: 110 pF
Output capacitance: 28 pF
Reverse transfer capacitance: 12 pF
Total gate charge: 2.0 nC
Switching delay times: t_on 6 ns, t_off 15 ns
Rise time: 9 ns, Fall time: 10 ns
Buy the ROHM Series TUMT3 N-channel MOSFET: RSF015N06TL
Purchase the ROHM RSF015N06TL power MOSFET online today and leverage its high current capacity, low on-resistance, and built-in protection diode. Ideal for compact and efficient switching circuits, this device delivers reliable operation up to 150°C. Its small surface mount package (TUMT3) simplifies integration into various electronic systems. Ensure optimal performance in your power management designs by choosing this high-quality MOSFET, which combines robust specifications with easy online accessibility for fast procurement and seamless installation.
Buy ROHM RSF015N06TL now and experience unmatched reliability and performance in power switching applications.
Frequently Asked Questions
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