The RU1J002YN is a small signal N-channel MOSFET rated for 50V and 200mA, ideal for battery-powered and portable electronic devices. It features low gate drive voltage of 0.9V, built-in gate-source and body diodes, and low on-state resistance for efficient switching. Its compact packaging and taping make it suitable for automatic assembly. With a power dissipation of 150mW and junction temperature up to 150°C, it provides reliable performance in switch mode circuits, with excellent thermal characteristics for compact design applications.
ROHM RU1J002YNTCL Small Signal MOSFET Specifications:
Drain-Source Voltage: 50V
Continuous Drain Current: 200mA
Pulsed Drain Current: 800mA
Gate-Source Voltage: ±8V
Power Dissipation: 150mW
Junction Temperature Range: -55°C to +150°C
Thermal Resistance, Junction to Ambient: 833°C/W
Input Capacitance: 26pF
Output Capacitance: 6pF
Reverse Transfer Capacitance: 3pF
Gate Threshold Voltage: 0.3V to 0.8V at Vos=10V
Static Drain-Source On-Resistance: 2.0Ω to 28Ω
Gate Charge and Switching Times are optimized for fast switching
Buy the ROHM Series U1J002YN Small Signal MOSFET: RU1J002YN
Purchase the ROHM Series U1J002YN small signal N-channel MOSFET online today for your switching and amplification needs. This device offers a 50V voltage rating with 200mA continuous current, low gate drive voltage of 0.9V, built-in protection diodes, and low on-resistance. Its compact size and efficient thermal management make it perfect for portable electronic devices, power management, and automation circuits. Enjoy fast switching capabilities, high reliability, and quality assurance when ordering directly from authorized distributors or online stores.
Order your ROHM Series U1J002YN small signal MOSFET today and ensure your circuit design benefits from reliable, low-voltage switching performance.
Frequently Asked Questions
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