The SCT2080KEHR is a high-voltage, automotive-grade N-channel Silicon Carbide (SiC) power MOSFET designed for reliable switching in industrial applications. It features low on-resistance, fast switching speeds, and a body diode for efficient power management. Qualified under the AEC-Q101 standard, it supports high pulse currents up to 80A and continuous currents of 28A at 125°C. Its TO-247N package ensures robust thermal performance, making it ideal for power supplies, motor drives, and EV charging systems, combining durability and efficiency for demanding environments.
ROHM SCT2080KEHRC11 High-Voltage SiC Power MOSFET Specifications:
Drain-Source Voltage: 1200 V
Continuous Drain Current: 28 A at 125°C
Pulsed Drain Current: 80 A
Gate-Source Voltage: -6 to +22 V
Gate Surge Voltage (for < 300 ns): > -10 to +26 V
Junction Temperature Range: -55°C to +175°C
Thermal Resistance (Junction to Case): 0.44 to 0.57 °C/W
Body Diode Forward Current: 40 A
Body Diode Reverse Recovery Time: 31 ns
Gate Threshold Voltage: 1.6 to 4.0 V
Package: TO-247N
RoHS Compliant and Pb-Free
Qualified to AEC-Q101 for automotive reliability
Buy the ROHM SCT2080KE – Reliable SiC Power MOSFET for Industrial Applications
Purchase the ROHM SCT2080KE high-voltage SiC power MOSFET online today to enhance your industrial or automotive power systems. Designed for reliability with low on-resistance, fast switching speeds, and superior thermal performance, this component ensures efficient power management in applications like EV chargers, power supplies, and motor drives. Manufactured with high-quality standards including AEC-Q101 qualification, it guarantees durability and stability in high-temperature environments. Secure your supply of this advanced power semiconductor now for improved system performance and reliability.
Get ROHM SCT2080KE today—built for precision, high voltage, and long-lasting durability in demanding industrial environments.
Frequently Asked Questions
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