The SCT2750NY is an advanced N-channel Silicon Carbide power MOSFET designed for high-voltage, high-current applications such as power supplies and motor drives. Featuring a low on-resistance of approximately 750 milliohms, it provides efficient switching with fast response times and robust thermal performance. With a drain-source voltage rating of 1700V, it ensures reliable operation under demanding conditions. The device includes a feature-rich design with simple drive requirements, a body diode for reverse conduction, and RoHS-compliant, Pb-free plating. Suitable for critical power management systems requiring high efficiency and durability.
Purchase the ROHM SCT2750NY high-voltage silicon carbide MOSFET online for your power supply or motor drive project. Featuring a drain-source voltage of 1700V, low on-resistance of 750mΩ, and fast switching capabilities, this device ensures high efficiency and durability. Its robust thermal performance, a thermal resistance of approximately 2.04 to 2.65 °C/W, and RoHS compliance make it ideal for demanding electrical systems. Order now and experience superior power management with this reliable, high-voltage switching component designed to meet your engineering needs.
You can click on the BUY or RFQ button to purchase SCT2750NYTB from an authorized ROHM distributor.
You can download the SCT2750NYTB datasheet or visit the ROHM website for support.
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