The SCT3080KLHR is an automotive-grade N-channel SiC power MOSFET with 1200V drain-source voltage, low on-resistance, and fast switching features. Qualified to AEC-Q101 standards, it offers a drain current of 22A at 100°C and pulsed current up to 77A. Suitable for high-power applications such as switch mode power supplies and automotive systems, it features Pb-free, RoHS-compliant packaging, and simple drive requirements for reliable and efficient operation in demanding environments.
ROHM SCT3080KLHRC11 High-Voltage SiC Power MOSFET Specifications:
Drain - Source Voltage: 1200 V
Continuous Drain Current: 22 A at 100°C
Pulsed Drain Current: 77 A
Gate - Source Voltage (DC): -4 to +22 V
Gate - Source Surge Voltage: -4 to +26 V
Recommended Drive Voltage: 0 to +18 V
Junction Temperature: 175°C
Storage Temperature Range: -55°C to +175°C
Body Diode Forward Current: 31 A
Body Diode Forward Voltage: 3.2 V at 10A
Static Rds(on): 80 mΩ (typ.)
Thermal Resistance (Junction to Case): 0.70°C/W (typ.)
Buy the ROHM Series SCT3080KLH: High-Voltage SiC Power MOSFET
Place your order for the ROHM Series SCT3080KLHR power MOSFET today to ensure reliable high-voltage operation and efficient switching in demanding automotive and industrial applications. This high-performance SiC device features 1200V drain-source voltage, low Rds(on), and fast switching capabilities, making it ideal for switch mode power supplies, inverter systems, and automation equipment. With RoHS compliance and an easy-to-drive structure, it guarantees durability and safety in critical power management systems, providing robust protection and high efficiency for your projects.
Order your ROHM Series SCT3080KLHR power MOSFET today and give your automotive and power supply projects the dependable quality they deserve.
Frequently Asked Questions
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