The VT6X12T2R is a dual NPN silicon epitaxial planar transistor package designed for current mirror circuits in power management applications. Featuring two small packages in one, it offers high current gain, low saturation voltage, and excellent switching performance with a maximum collector-emitter voltage of 50V and collector current of 200mA. Suitable for compact, efficient circuit design, it provides reliable operation in various electronic devices. Its specifications include a junction temperature up to 150°C, breakdown voltages, and low saturation voltages, making it ideal for precise current regulation and high-speed switching tasks.
Discover the high-performance ROHM VT6X12T2R dual NPN transistor, perfect for current mirror and power management applications. Its compact design offers high gain, low saturation voltage, and excellent switching capabilities. With a maximum collector-emitter voltage of 50V and collector current of 200mA, it ensures reliable and efficient circuit operation. Ideal for industrial electronics, automation systems, and power regulation tasks, this module provides robust performance for demanding electronic projects. Purchase online today for fast delivery and trusted quality.
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You can download the VT6X12T2R datasheet or visit the ROHM website for support.
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