The BDW93CFP is an NPN silicon epitaxial-base power transistor with a monolithic Darlington configuration, housed in a fully molded insulated package. It features an integrated anti-parallel collector-emitter diode and is designed for use in power linear and switching applications. Its PNP complementary counterpart is the BDW94CFP. The device is suitable for industrial and power management applications. Please note that market demand has extended lead times, and delivery dates may fluctuate. Discounts are not applicable.
STMICROELECTRONICS BDW93CFP Power Transistor Specifications:
Collector-Base Voltage: 100 V
Collector-Emitter Voltage: 100 V
Collector Current: 12 A
Peak Collector Current: 15 A
Base Current: 0.2 A
Total Dissipation at 25°C: 33 W
Storage Temperature Range: -65°C to 150°C
Maximum Junction Temperature: 150°C
Thermal Resistance Junction-Case Max: 3.8°C/W
Collector-Emitter Saturation Voltage: 2 V at 5A Ic
Base-Emitter Saturation Voltage: 2.5 V at 5A Ic
DC Current Gain: 750 to 20000 at Ic=3A
Package Type: TO-220FP fully molded insulated
Buy the STMicroelectronics Series Power Transistor: BDW93CFP
Purchase the STMicroelectronics BDW93CFP power transistor online today for reliable power switching and linear operations in industrial equipment. This power Darlington transistor features a fully molded insulated package and an integrated anti-parallel diode, suitable for high-current applications up to 12 A. With a collector-emitter voltage of 100 V and high DC current gain, it ensures efficient performance. Perfect for industrial power management, it offers high thermal stability and durability. Order now and benefit from fast, secure online delivery for your electronic projects.
Get STMicroelectronics BDW93CFP today—built for power switching and industrial durability.
Frequently Asked Questions
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You can download the BDW93CFP datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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