The FERD30H60C is a 60 V dual IGBT rectifier diode designed with proprietary technology for optimized efficiency and thermal performance in confined applications such as adapters and chargers. It features a low forward voltage drop of typ. 0.41 V, a maximum junction temperature of 175°C, and a peak repetitive reverse voltage of 60 V. Capable of handling currents up to 60 A (rms) and surge currents up to 250 A, it offers high frequency operation, low leakage, and a stable reverse leakage current across temperature ranges. Delivered in TO-220AB and DPAK packages, it ensures reliable thermal management with thermal resistances of 1.5°C/W junction to case and 0.9°C/W junction to ambient.
Forward voltage drop: typ. 0.41 V at 3 A, up to max 0.585 V at 15 A
Reverse leakage current: 170 pA at 25°C, up to 20 A at 125°C
Package options: TO-220AB, DPAK
Package dimensions: TO-220AB - A: 4.40–4.60 mm, D: 15.25–15.75 mm; DPAK - A: 4.40–4.60 mm, D: 8.95–9.35 mm
Operating temperature range: -65°C to +175°C
Buy the Buy STMicroelectronics FERD30H60C Part Number FERD30H60CTS Online
Order the STMicroelectronics FERD30H60C high-voltage rectifier diode online today for reliable power conversion in adapters and chargers. Designed for efficiency, it features a low forward voltage, high surge current capacity, and excellent thermal performance. Available in durable packages like TO-220AB and DPAK, this diode supports high-frequency operation and ensures long-lasting durability. Perfect for use in confined spaces requiring compact design, it guarantees stable operation across a wide temperature range, making it the ideal choice for power supply engineering and industrial applications.
Get STMicroelectronics FERD30H60C today—built for high current handling and thermal efficiency in power rectification applications.
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