The MJD31C is a low-voltage NPN power transistor designed for use in general-purpose linear and switching applications. It features a surface-mount DPAK (TO-252) package, manufactured using planar technology with a base island layout for high gain performance and very low saturation voltage. It delivers collector-emitter voltages up to 100V, collector currents of 3A, and incorporates thermal resistance of 8.3 °C/W junction-case and 50 °C/W junction-ambient. Suitable for various linear and switching circuits requiring high efficiency and reliable operation.
STMICROELECTRONICS MJD31CT4 Power Transistor Specifications:
Package: DPAK (TO-252)
Collector-Base Voltage: 100 V
Collector-Emitter Voltage: 100 V
Emitter-Base Voltage: 5 V
Collector Current: 3 A
Collector Peak Current: 5 A
Base Current: 1 A
Total Dissipation: 15 W at 25°C
Storage Temperature Range: -65°C to 150°C
Max Junction Temperature: 150°C
Thermal Resistance Junction-Case Max: 8.3 °C/W
Thermal Resistance Junction-Ambient Max: 50 °C/W
Buy the STMicroelectronics Series MJD Power Transistor: MJD31C
Purchase the STMicroelectronics MJD31C power transistor online today to ensure your linear and switching circuits deliver exceptional high gain and efficiency. This NPN device, housed in a compact DPAK package, supports voltages up to 100V and currents up to 3A, making it ideal for high-performance applications. Its planar technology provides excellent gain and low saturation voltage for optimal power management. Easy to incorporate into your design, order now to enhance your electronic systems' performance with a highly reliable, efficient transistor.
Order your STMicroelectronics Series MJD31C power transistor today and give your electronic projects the reliable high-performance switching and linear power management they require.
Frequently Asked Questions
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You can download the MJD31CT4 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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