These N-channel MDmesh V Power MOSFETs operate at 650 V and feature extremely low on-resistance, high Vpgg rating, and excellent switching performance. Built with proprietary vertical and horizontal technology, they are ideal for high-power density switching applications. Available in DPAK, TO-220, and TO-247 packages, they are 100% avalanche tested to ensure durability and reliability. Designed for efficient power switching and management, these MOSFETs deliver remarkable efficiency, making them suitable for professional power conversion and automotive systems.
STMICROELECTRONICS STB38N65M5 Power MOSFET Specifications:
Vds: 650 V
Id (Drain current): 30 A at Tc=25°C
Rds(on): 0.073 Ω (Typ.)
Pulse drain current: 120 A
Gate threshold voltage: 3-5 V
Total dissipation: 190 W
Gate-source voltage: ±25 V
Storage temperature: -55°C to +150°C
Max junction temperature: 150°C
Package options: DPAK, TO-220, TO-247
Thermal resistance junction-case: 0.66 °C/W
Avalanche current: 8 A
Max dv/dt: 50 V/ns
Avalanche energy: 70 μJ
Gate charge: 71 nC
Buy the STMicroelectronics Series MDmesh V Power MOSFET: STB38N65M5
Order the STB38N65M5 Power MOSFET online today and benefit from superior power density, low on-resistance, and outstanding efficiency. Designed for high-voltage switching in demanding environments, this device features a 650 V rating, 30 A continuous current, and robust avalanche testing. Its availability in multiple packages allows integration into various systems. Enhance your power conversion and switching solutions by purchasing this reliable, high-performance MOSFET with quick delivery and competitive pricing, ensuring optimal performance in your engineering applications.
Buy STMicroelectronics STB38N65M5 now and experience unmatched reliability and performance in high-power switching applications.
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