myMectronic
myMectronic

A Premier B2B Part Search

STMICROELECTRONICS STF6N65M2 High-Voltage Power MOSFET

These N-channel Power MOSFETs are developed using MDmesh™ M2 technology, featuring low on-resistance and optimized switching characteristics, suitable for high-efficiency converters and demanding switching applications. They are available in TO-220FP, TO-220, and IPAK packages, providing excellent performance in power management and switching circuits. With extremely low gate charge, excellent output capacitance profile, and UL94V-0 flammability rating, these devices ensure reliability and efficiency for industrial electronics and power supply systems. They are also tested for avalanche energy and are zener-protected for added durability.

Authorized Distributors
Source:Newark
Part No:STF6N65M2
Stock:1658
Inv Date:06-11-2026
Price: Unit price: $0.88
Buy/RFQ:
Source:DigiKey
Part No:STF6N65M2
Stock:285
Inv Date:06-11-2026
Price: N/A
Buy/RFQ:
Part No:STF6N65M2
Stock:1595
Inv Date:06-12-2026
Price: Unit price: $1.76
Buy/RFQ:
Part No:STF6N65M2
Stock:400
Inv Date:06-12-2026
Price: N/A
Buy/RFQ:

STMICROELECTRONICS STF6N65M2 High-Voltage Power MOSFET Specifications:

  • Ves (Gate-source voltage): +25 V
  • Ip (Drain current, continuous at 25°C): 4 A
  • Ib (Drain current, continuous at 100°C): 2.5 A
  • Ip (Drain pulsed current): 16 A
  • Total dissipation: 20 W (TO-220FP), 60 W (TO-220, IPAK)
  • Insulation withstand voltage: 2500 V (RMS, 1s)
  • dvict (Peak diode recovery voltage slope): 15 V/ns
  • Storage temperature: -55°C to +150°C
  • Max. junction temperature: Limited by maximum junction Tj
  • Rθj-case (Thermal resistance junction-case): 6.25°C/W (TO-220FP), 2.08°C/W (TO-220, IPAK)
  • Rθj-amb (Thermal resistance junction-ambient): 62.5°C/W (TO-220FP), 100°C/W (TO-220, IPAK)
  • Vds (Breakdown voltage): 850 V
  • Rds(on) (Static drain-source resistance): 12-135 mΩ (at Vgs=10 V, Id=2A)
  • Capacitances: Ciss (226 pF), Coss (128 pF), Crss (0.65 pF)
  • Switching times: Turn-on delay 19 ns, Rise time 7 ns, Turn-off delay 6.5 ns, Fall time 20 ns
  • Reverse recovery time: 260 ns, Qe (recovery charge): 1.2 μC

Buy the Buy STMicroelectronics STF6N65M2 Part Number STF6N65M2 Online

Purchase the STMicroelectronics STF6N65M2 online for reliable high-voltage switching solutions. These N-channel MOSFETs feature low on-resistance and excellent switching characteristics, making them ideal for high-efficiency converters and industrial power circuits. Available in multiple packages including TO-220FP, TO-220, and IPAK, they provide robust performance and durability under demanding conditions. Designed with UL94V-0 flammability and avalanche testing, these devices ensure safety and long-lasting operation in power supply systems and automation equipment. Buy now for seamless integration into your power management designs.

Get STMicroelectronics STF6N65M2 today—built for high current and efficient switching performance in power management applications.

Frequently Asked Questions

Where can I buy STMICROELECTRONICS STF6N65M2?

You can click on the BUY or RFQ button to purchase STF6N65M2 from an authorized STMICROELECTRONICS distributor.

How do I troubleshoot issues or seek technical support for part STF6N65M2?

You can download the STF6N65M2 datasheet or visit the STMICROELECTRONICS website for support.

Who is the manufacturer of STF6N65M2?

STMICROELECTRONICS

STMICROELECTRONICS Part List

Browse and search other STMICROELECTRONICS parts, locate datasheets and stock

Sponsored by