This trench gate field-stop IGBT offers low loss and high efficiency for inverter applications. With a 650 V voltage rating and 10 A continuous current, it features fast switching times, soft recovery diode, and a safe paralleling operation due to tight parameter distribution. Designed for motor control, UPS, and PFC systems, it provides excellent thermal performance, short-circuit withstand time of 6 microseconds, and low on-voltage drop. Its advanced structure ensures reliable operation in high-power switching environments, making it ideal for demanding industrial and electronic control systems.
Continuous collector current: 20 A at 25°C, 10 A at 100°C
Pulsed collector current: 40 A
Gate-emitter voltage: +20 V
Total dissipation: 115 W
Storage temperature: -55°C to 150°C
Operating junction temperature: -55°C to 175°C
Thermal resistance junction-case: 1.3°C/W
Thermal resistance junction-ambient: 62.5°C/W
Short-circuit withstand time: 6 µs
Turn-on delay time: 19 ns
Turn-off delay time: 91 ns
Switching energy (Turn-on): 0.12 mJ
Switching energy (Turn-off): 0.27 mJ
Reverse recovery energy: 52 J
Package: D2PAK cool package with thermal pad
Manufactured under ECOPACK® environmental standards
Buy the Buy STMicroelectronics STGB10M65DF2 Part Number STGB10M65DF2 Online
Order the STGB10M65DF2 trench gate IGBT module online today for high efficiency inverter applications. With a 650 V rating and 10 A continuous current, it ensures low power losses, fast switching, and reliable operation in motor control, UPS, and power factor correction systems. Its optimized structure offers excellent thermal management, a short-circuit withstand time of 6 microseconds, and is compliant with environmentally friendly ECOPACK® standards. Perfect for demanding industrial and power electronic applications, it guarantees robust performance and easy integration in high-power switching environments.
Buy STMicroelectronics STGB10M65DF2 now and experience unmatched reliability and performance with low loss and fast switching capabilities.
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