STMICROELECTRONICS STGW40H65DFB4 High Speed Power IGBT
This high-speed trench gate field-stop IGBT from the HB series offers a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. It features minimized tail current, low saturation voltage of approximately 1.6 V at 40 A, and very fast switching capabilities suitable for photovoltaic inverters and high-frequency converters. The device incorporates a Kelvin pin for faster switching, tight parameter distribution for parallel operation safety, and low thermal resistance, making it ideal for efficient power switching applications with enhanced thermal management.
STMICROELECTRONICS STGW40H65DFB4 High Speed Power IGBT Specifications:
Collector-emitter voltage: 650 V
Continuous collector current: 80 A at 25°C
Pulsed collector current: 160 A
Gate-emitter voltage: +20 V
Storage temperature: -55 to 150°C
Operating junction temperature: -55 to 175°C
Thermal resistance junction-case IGBT: 0.53 °C/W
Thermal resistance junction-case diode: 1.14 °C/W
Thermal resistance junction-ambient: 50 °C/W
Package: TO247-4
Maximum junction temperature: 175°C
Emitter short circuit capability, low tail current
Vce(sat): approximately 1.6 V at 40 A
Fast soft recovery antiparallel diode
Safe paralleling operation with tight parameter distribution
Buy the STMicroelectronics Series HB High Speed IGBT: G40H65DFB
Enhance your power conversion projects with this high-speed, 650 V, 40 A IGBT featuring low saturation voltage, fast switching, and a Kelvin pin for efficiency. Designed for photovoltaic inverters and high-frequency converters, it offers reliable paralleling, low thermal resistance, and excellent thermal management. Order online today to leverage superior switching performance and reduce your system's energy losses with STMicroelectronics' advanced IGBT technology.
Buy STMicroelectronics HB Series G40H65DFB high-speed IGBT now and experience unmatched reliability and performance in power conversion applications.
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