STMICROELECTRONICS STGW75H65DFB24 High-Speed Power IGBT
The STMIGBT 650 V HB2 series is a high-performance, trench gate field-stop IGBT in a TO247-4 package designed for fast switching applications such as welding, power factor correction, UPS, solar inverters, and chargers. It features a maximum junction temperature of 175°C, low saturation voltage, very fast and soft recovery diode, minimized tail current, and excellent switching efficiency thanks to an extra kelvin pin. Optimized conduction behavior and reduced switching energy maximize overall system efficiency and reliability.
STMICROELECTRONICS STGW75H65DFB24 High-Speed Power IGBT Specifications:
Collector-emitter voltage: 650 V
Continuous collector current at 25°C: 115 A
Pulsed collector current: 225 A
Gate-emitter voltage: ±20 V
Total power dissipation: 357 W
Storage temperature range: -55 to 150°C
Operating junction temperature: -55 to 175°C
Thermal resistance junction-case: 0.42 K/W
Thermal resistance junction-ambient: 50 K/W
Package: TO247-4
Mechanical dimensions: see datasheet for detailed outline
Includes extra Kelvin pin for better switching performance
Features fast soft recovery diode with reverse recovery charge of 5431 nC at 75A
Buy the Buy STMicroelectronics IGBT Part Number STGW75H65DFB24 Online
Order the STMicroelectronics high-speed power IGBT STGW75H65DFB24 online today. Designed for fast switching, high efficiency, and reliability, this component is ideal for welding, power correction, UPS, solar inverters, and chargers. Its advanced trench gate structure ensures excellent conduction and reduced switching energy, maximizing system performance. The TO247-4 package with a Kelvin pin optimizes switch dynamics, making it suitable for demanding industrial and power conversion applications. Buy online now for reliable, long-lasting operation in your projects.
Get STMicroelectronics STGW75H65DFB24 today—built for high-speed switching, efficiency, and durability in power inverters and industrial applications.
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