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STMICROELECTRONICS STGWA8M120DF3 Power IGBT module

The STGWA8M120DF3 is a trench gate field-stop IGBT designed for high efficiency and low-loss operation in industrial drives, UPS, solar, and welding applications. Featuring a 1200 V voltage rating, 8 A continuous collector current, short-circuit withstand time of 10 μs, and soft recovery diode, it offers enhanced safety and thermal performance. Developed with advanced proprietary trench gate technology, it provides tight parameter distribution, safer paralleling, and low thermal resistance, making it suitable for demanding power conversion systems requiring reliable switching and high precision control.

Authorized Distributors
Source:Newark
Part No:STGWA8M120DF3
Stock:4
Inv Date:06-11-2026
Price: Unit price: $4.46
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Source:DigiKey
Part No:STGWA8M120DF3
Stock:284
Inv Date:06-11-2026
Price: Unit price: $4.34
Buy/RFQ:
Part No:STGWA8M120DF3
Stock:0
Inv Date:06-12-2026
Price: Unit price: $4.34
Buy/RFQ:

STMICROELECTRONICS STGWA8M120DF3 Power IGBT module Specifications:

  • Collector-emitter voltage: 1200 V
  • Continuous collector current at Tc=25°C: 16 A
  • Pulse collector current: 32 A
  • Gate-emitter voltage: +20 V
  • Forward current at Tc=25°C: 16 A
  • Pulse forward current: 32 A
  • Total dissipation at Tc=25°C: 167 W
  • Storage temperature range: -55°C to 150°C
  • Operating junction temperature range: -55°C to 175°C
  • Thermal resistance junction-case IGBT: 0.9 °C/W
  • Thermal resistance junction-ambient: 50 °C/W
  • Collector-emitter breakdown voltage: 1200 V
  • Max collector current: 16 A
  • Switching turn-on delay: 20 ns
  • Switching turn-off delay: 19 ns
  • Short-circuit withstand time: 10 μs
  • Reverse recovery time of diode: 103 ns
  • Peak reverse recovery energy: 211 μJ
  • Device package: TO-247 and long leads variants
  • Designed for high efficiency, fast switching, and paralleling safety

Buy the Buy STMicroelectronics IGBT Part Number STGWA8M120DF3 Online

Purchase the STGWA8M120DF3 Power IGBT online now to ensure high efficiency, fast switching, and dependable performance in industrial, solar, and welding applications. With advanced trench gate technology, tight parameter distribution, and a 1200 V voltage rating, this device provides superior thermal management and safer paralleling. Designed for demanding power conversion systems, it guarantees enhanced reliability, low thermal resistance, and high-speed operation, making it an ideal choice for engineers seeking quality and durability in their electronic power controls. Order today to upgrade your systems seamlessly.

Order your STMicroelectronics SeriesSTGWA8M120DF3 high-voltage IGBT today and enhance your power systems with reliable switching performance and low-loss operation.

Frequently Asked Questions

Where can I buy STMICROELECTRONICS STGWA8M120DF3?

You can click on the BUY or RFQ button to purchase STGWA8M120DF3 from an authorized STMICROELECTRONICS distributor.

How do I troubleshoot issues or seek technical support for part STGWA8M120DF3?

You can download the STGWA8M120DF3 datasheet or visit the STMICROELECTRONICS website for support.

Who is the manufacturer of STGWA8M120DF3?

STMICROELECTRONICS

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